Semiconductor device having an anti- reflective film on an inter

Details Semiconductor device having an anti- reflective film on an inter Semiconductor device having an anti- reflective film on an inter

1997-03-19

2000-03-07

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438713, 438720, 438945, H01L 2144

Patent

active

060339861

ABSTRACT:
A barrier metal film, Al alloy film and anti-reflective film are sequentially deposited on a surface to form an interconnect pattern by a photolithography technique. An overhanging portion of the anti-reflective film is etched away by a plasma of a Cl.sub.2 /BCl.sub.3 -mixed gas. Then an insulating interlayer is deposited on a resultant semiconductor structure.

REFERENCES:
patent: 4919748 (1990-04-01), Bredbenner et al.
patent: 5174856 (1992-12-01), Hwang et al.
patent: 5277757 (1994-01-01), Sato

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