Contact process interconnect poly-crystal silicon layer in thin

Details Contact process interconnect poly-crystal silicon layer in thin Contact process interconnect poly-crystal silicon layer in thin

1998-06-30

2000-03-07

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438149, 438238, 438381, 438382, 438241, 438153, 438683, 438630, H01L 218234

Patent

active

060339853

ABSTRACT:
A contact process interconnects poly-crystal silicon layer, and more particularly, this process dramatically decreases the voltage drop within a poly-crystal silicon layer. The advantages of the process include not only improvement in the interface quality of Poly-Si/SiO2 to decrease the junction damage but also do not increase its process complexity and its mask number during the fabrication of poly-crystal silicon thin-film SRAM to meet high integration requirement in VLSI.

REFERENCES:
patent: 5329486 (1994-07-01), Lage
patent: 5408130 (1995-04-01), Woo et al.
patent: 5668391 (1997-09-01), Kim et al.
patent: 5824579 (1998-10-01), Subramanian et al.
patent: 5895961 (1999-04-01), Chen
patent: 5937291 (1999-08-01), Tsai et al.

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