Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-01-10
2000-03-07
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438628, 438778, 438784, 438786, H01L 21314
Patent
active
060339799
ABSTRACT:
The invention provides a semiconductor device in which interlayer insulative layers are composed of amorphous carbon film. The amorphous carbon film may include fluorine (F) therein. The invention further provides a method of fabricating a semiconductor device including an interlayer insulative layer composed of amorphous carbon film including fluorine (F), the method having the step of carrying out plasma-enhanced chemical vapor deposition (PCVD) using a mixture gas including (a) at least one of CF.sub.4, C.sub.2 F.sub.6, C.sub.3 F.sub.8, C.sub.4 F.sub.8 and CHF.sub.3, and (b) at least one of N.sub.2, NO, NO.sub.2, NH.sub.3 and NF.sub.3. The method provides amorphous carbon film having superior heat resistance and etching characteristics. By composing interlayer insulative layers of a semiconductor device of the amorphous carbon film, the semiconductor device can operate at higher speed.
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Bowers Charles
NEC Corporation
Whipple Matthew
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