Memory array with byte-alterable capability

Details Memory array with byte-alterable capability Memory array with byte-alterable capability

2006-06-06

2006-06-06

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S301000, C257S304000

Reexamination Certificate

active

07057228

ABSTRACT:
This invention provides a memory array and it support signals and a method for byte access for programming, erasing and reading memory cells. The advantage of this array and method is the ability to access bytes for program, erase, and read operations. This array and method uses an added isolation transistor to isolate the high voltage from the unselected byte. In addition, it utilizes a separate source line for each byte in a row. This source line is also shared by a byte in a different row. The array has very little peripheral circuit overhead requirement and it avoids programming disturbances of unselected memory cells.

REFERENCES:
patent: 5812452 (1998-09-01), Hoang
patent: 6088269 (2000-07-01), Lambertson
patent: 6128220 (2000-10-01), Banyai et al.
patent: 6201732 (2001-03-01), Caywood
patent: 6212102 (2001-04-01), Georgakos et al.
patent: 6510081 (2003-01-01), Blyth et al.
patent: 6862223 (2005-03-01), Lee et al.

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