Selective etching processes for In 2 O 3 thin films in...

Details Selective etching processes for In 2 O 3 thin films in... Selective etching processes for In 2 O 3 thin films in...

2006-05-30

2006-05-30

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

24, 24

Reexamination Certificate

active

07053001

ABSTRACT:
A method of selective etching a metal oxide layer for fabrication of a ferroelectric device includes preparing a silicon substrate, including forming an oxide layer thereon; depositing a layer of metal or metal oxide thin film on the substrate; patterning and selectively etching the metal or metal oxide thin film without substantially over etching into the underlying oxide layer; depositing a layer of ferroelectric material; depositing a top electrode on the ferroelectric material; and completing the ferroelectric device.

REFERENCES:
patent: 6407422 (2002-06-01), Asano et al.
patent: 6613679 (2003-09-01), Chino

Affiliated with

Also associated with

Rating

Selective etching processes for In 2 O 3 thin films in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective etching processes for In 2 O 3 thin films in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective etching processes for In 2 O 3 thin films in... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3622642