Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2006-04-04
2006-04-04
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S022000, C438S025000, C438S026000, C438S064000, C438S604000
Reexamination Certificate
active
07022550
ABSTRACT:
A flip-chip LED device (10) includes a plurality of group III-nitride semiconductor layers (22) defining a p
junction and including a top p-type group III-nitride layer (28), and a p-contact (30, 30′, 30″) for flip-chip bonding the top p-type group III-nitride layer. The p-contact includes an aluminum layer (32) disposed on the top p-type group III-nitride layer (28), and an interface layer (40, 66, 72, 80) disposed between the aluminum layer and the top p-type group III-nitride layer. The interface layer reduces a contact resistance between the aluminum layer (32) and the top p-type group III-nitride layer (28). The interface layer comprises one or more group III-nitride layers.
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Fay Sharpe Fagan Minnich & McKee LLP
GELcore LLC
Huynh Andy
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