Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-15
2006-08-15
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S331000, C257S339000, C257S341000, C257S342000
Reexamination Certificate
active
07091552
ABSTRACT:
A power semiconductor device is made in accordance with a method of providing a substrate of a first or second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one trench in the epitaxial layer. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material into a portion of the epitaxial layer adjacent to and beneath the bottom of the trench. The dopant is diffused to form a first doped layer in the epitaxial layer and the barrier material is removed from at least the bottom of the trench. The trench is etched through the first doped layer. A second doped layer is formed in the same manner as the first doped layer. The second doped layer is located vertically below the first doped layer. A filler material is deposited in the trench to substantially fill the trench. The dopant in the First and second doped layers are diffused to cause the first and second doped layers to overlap one another, thus completing the voltage sustaining region. Finally, at least one region of the second conductivity type is formed over the voltage sustaining region to define a junction therebetween.
REFERENCES:
patent: 4419150 (1983-12-01), Soclof
patent: 4569701 (1986-02-01), Oh
patent: 4711017 (1987-12-01), Lammert
patent: 4893160 (1990-01-01), Blanchard
patent: 5108783 (1992-04-01), Tanigawa et al.
patent: 5216275 (1993-06-01), Chen
patent: 6465304 (2002-10-01), Blanchard et al.
patent: 6566201 (2003-05-01), Blanchard
patent: 6576516 (2003-06-01), Blanchard
patent: 6649477 (2003-11-01), Blanchard et al.
patent: 2001/0026977 (2001-10-01), Hattori et al.
patent: 2001/0036704 (2001-11-01), Hueting et al.
patent: 2001/0053568 (2001-12-01), Deboy et al.
patent: 2002/0117715 (2002-08-01), Oppermann et al.
patent: 2003/0122189 (2003-07-01), Blanchard et al.
Chen, Xing Bi et al., “A Novel High-Voltage Sustaining Structure With Buried Oppositely Doped Regions,”IEEE Transactions on Electron Devices, vol. 47, No. 6, Jun. 2000, pp. 1280-1285.
Cezac, N. et al., “A New Generation of Power Unipolar Devices: the Concept of the Floating Islands MOS Transistor (FLIMOST),”Proceedings of the 12thInternational Symposium on Power Semiconductor Devices&ICs, Toulouse, France, May 22-25, 2000, pp. 69-72.
Deboy, G. et al, “A New Generation of High Voltage MOSFETs Breaks the Limit Line of Silicon,”International Electron Devices Meeting Technical Digest, Dec. 6-9, 1998, pp. 683-685.
Lee, Ming-Kwang et al., “On the Semi-Insulating Polycrystalline Silicon Resistor,”Solid State Electronics, vol. 27, No. 11, 1984, pp. 995-1001.
General Semiconductor Inc.
Loke Steven
Mayer & Williams PC
Mayer, Esq. Stuart H.
Williams Esq. Karin L.
LandOfFree
High voltage power MOSFET having a voltage sustaining region... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage power MOSFET having a voltage sustaining region..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage power MOSFET having a voltage sustaining region... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3617158