Method of fabricating a low-defect strained epitaxial...

Details Method of fabricating a low-defect strained epitaxial... Method of fabricating a low-defect strained epitaxial...

2006-05-02

2006-05-02

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Reexamination Certificate

active

07037856

ABSTRACT:
A method of fabricating a germanium film on a silicon substrate includes preparing a silicon substrate; depositing a first germanium film to form a continuous germanium film on the silicon substrate; annealing the silicon substrate and the germanium film thereon in a first annealing process to relax the germanium film; depositing a second germanium film on the first germanium film to form a germanium layer; patterning and etching the germanium layer; depositing a layer of dielectric material on the germanium layer; cyclic annealing the silicon substrate having the germanium layer and dielectric material thereon; and completing a device containing the silicon substrate and germanium layer.

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