Substrate having built-in semiconductor apparatus and...

Details Substrate having built-in semiconductor apparatus and... Substrate having built-in semiconductor apparatus and...

2006-08-08

2006-08-08

Tran, Mai-Huong (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S311000, C438S584000, C438S589000

Reexamination Certificate

active

07087514

ABSTRACT:
A substrate having a built-in semiconductor apparatus includes: a semiconductor apparatus which comprises a first semiconductor chip having a first electrode pad formed on a main surface thereof, a protruding portion which is in contact with the first semiconductor chip and protrudes from a side surface of the first semiconductor chip to the outside, an apparatus wiring portion which is provided so as to extend from the first electrode pad onto a surface of the protruding portion, a conductive portion which is in connected with the apparatus wiring portion and provided on the apparatus wiring portion, and a sealing layer which covers the main surface and the surface of the protruding portion so as to expose a top face of the conductive portion; an insulating layer in which the semiconductor apparatus is embedded; an external terminal provided on the insulating layer; and a substrate wiring portion which electrically connects the conductive portion with the external terminal.

REFERENCES:
patent: 6750125 (2004-06-01), Ohuchi
patent: 2002-170827 (2002-06-01), None

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