Structure and method of liner air gap formation

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure

Reexamination Certificate

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C438S319000, C438S411000, C438S619000

Reexamination Certificate

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07094669

ABSTRACT:
A structure and method of a semiconductor device with liner air gaps next to interconnects and dielectric layers. A dielectric layer is formed over a lower dielectric layer and a lower interconnect over a substrate. We form an interconnect opening in the dielectric layer. The opening has sidewalls of the dielectric layer. A sacrificial liner is formed over the sidewalls of the interconnect opening. An upper interconnect is formed that fills the opening. We remove the sacrificial liner/spacers to form (air) liner gaps.

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Kohl, et al., Air Gaps for Electrical Connections, Electrochemical and solid -State letters, 1(1) pp. 49-51(1998).

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