Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-14
2006-03-14
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S638000, C438S639000
Reexamination Certificate
active
07012020
ABSTRACT:
In accordance with the objectives of the invention a new method and structure is provided for the creation of multiple overlying layers of interconnect metal. A channel is reserved for the creation of via interconnects, no vias are placed on metal lines. The metal lines are stacked and parallel, whereby a space is provided between lines that is reserved for the creation of vias for layer interconnection. This structure can be repeated, the vias are placed on the therefore reserved channel, interconnections are provided to the interconnect traces.
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Lebentritt Michael
Pompey Ron
Taiwan Semiconductor Manufacturing Co. Ltd.
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