Semiconductor device having a wave-like channel region

Details Semiconductor device having a wave-like channel region Semiconductor device having a wave-like channel region

2006-09-12

2006-09-12

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000

Reexamination Certificate

active

07105892

ABSTRACT:
A minute semiconductor device having a high driving ability and a manufacturing method thereof are provided. A semiconductor device includes a support substrate, an insulating layer that is formed above the support substrate, a semiconductor layer that is formed above the insulating layer, a channel region that is provided in the semiconductor layer, a source region and a drain region that are formed so as to sandwich the channel region, and a gate electrode that is formed above the channel region via a gate insulating layer. The boundary between the gate insulating layer and the channel region has a wave-like pattern of a gradual slope without any corners.

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