Semiconductor device with transistor and capacitor and its...

Details Semiconductor device with transistor and capacitor and its... Semiconductor device with transistor and capacitor and its...

2006-09-26

2006-09-26

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S304000, C257S310000, C257S311000, C257SE21008, C438S244000, C438S386000

Reexamination Certificate

active

07112839

ABSTRACT:
On a semiconductor substrate, a transistor and a capacitor electrically connected to the transistor are formed, the capacitor having two electrodes made of metal and a capacitor dielectric layer between the two electrodes made of oxide dielectric material. A temporary protective film is formed over the capacitor, the temporary protective film covering the capacitor. The semiconductor substrate with the temporary protective film is subjected to a heat treatment in a reducing atmosphere. The temporary protective film is removed. The semiconductor substrate with the temporary protective film removed is subjected to a heat treatment in an inert gas atmosphere or in a vacuum state. A protective film is formed over the capacitor, the protective film covering the capacitor. With these processes, leak current of the capacitor can be reduced.

REFERENCES:
patent: 6188098 (2001-02-01), Amanuma
patent: 6313014 (2001-11-01), Sakaguchi et al.
patent: 6344413 (2002-02-01), Zurcher et al.
patent: 6465370 (2002-10-01), Schrems et al.
patent: 6511856 (2003-01-01), Van Buskirk et al.
patent: 6605835 (2003-08-01), Lee
Office action dated Mar. 25, 2004 for the corresponding Taiwan patent application.
Wolf, “Silicon Processing for the VLSI Era”, Lattice Press, vol. 2, pp. 434-435.

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