Method and system for fabricating a copper barrier layer...

Details Method and system for fabricating a copper barrier layer... Method and system for fabricating a copper barrier layer...

2006-07-18

2006-07-18

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000

Reexamination Certificate

active

07078336

ABSTRACT:
A method is disclosed for reducing metal diffusion in a semiconductor device. After forming a first metal portion over a substrate, a silicon carbon nitro-oxide (SiCNO) layer is deposited on the first metal portion. A dielectric layer is deposited over the SiCNO layer, and an opening is generated in the SiCNO layer and the dielectric layer for a second metal portion to be connected to the first metal portion, wherein the SiCNO layer reduces the diffusion of the first metal portion into the dielectric layer.

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