Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-23
2006-05-23
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000, C438S617000
Reexamination Certificate
active
07049217
ABSTRACT:
In the method of forming a multi-piled bump, metal balls can be stably and securely piled so as to form the multi-piled bump having a prescribed height. The method of the present invention comprises the steps of: holding a metal wire by a capillary; sparking and melting the wire so as to form metal balls; piling a plurality of the metal balls with applying a load and ultrasonic vibrations thereto, and characterized in that a tail length of the metal wire, which is held by the capillary, is controlled to make a gap between a center of the metal wire and a center of the metal ball one half of a diameter of the metal wire or less.
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Ishikawa Naoki
Kira Hidehiko
Takeuchi Shuichi
Fujitsu Limited
Thomas Toniae M.
Westerman, Hattori, Daniels & Adrian , LLP.
Wilczewski Mary
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