Multilayer copper structure for improving adhesion property

Details Multilayer copper structure for improving adhesion property Multilayer copper structure for improving adhesion property

2006-08-08

2006-08-08

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21011

Reexamination Certificate

active

07087522

ABSTRACT:
A multilayer copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayer copper structure comprises a thin high-resistive copper layer to provide improved adhesion to the underlying diffusion barrier layer, and a low-resistive copper layer to carry the electrical current with minimum electrical resistance. The invention also provides a method to form the multilayer copper structure.

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