Nonvolatile semiconductor memory cell and method of...

Details Nonvolatile semiconductor memory cell and method of... Nonvolatile semiconductor memory cell and method of...

2006-03-21

2006-03-21

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000

Reexamination Certificate

active

07015539

ABSTRACT:
A stacked-gate structure includes a tunnel insulation film, a floating gate electrode, an inter-electrode insulation film and a control gate electrode, which are stacked on a semiconductor substrate. The inter-electrode insulation film has a three-layer structure that includes a first oxidant barrier layer, an intermediate insulation layer and a second oxidant barrier layer. Gate side-wall insulation films are formed on both side surfaces of the stacked-gate structure. The thickness of the gate side-wall insulation film increases, at a side portion of the floating gate electrode, from the inter-electrode insulation film side toward the tunnel insulation film side. The width of the floating gate electrode in a channel length direction decreases from the inter-electrode insulation film side toward the tunnel insulation film side.

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