Semiconductor device

Details Semiconductor device Semiconductor device

2006-09-12

2006-09-12

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S394000

Reexamination Certificate

active

07105901

ABSTRACT:
An active area (1) is provided with a concave part in its corner portion in a shape along a plan view. An insulating film (7) encloses this active area. A gate electrode (30) is arranged on a depressed region (DR) having an edge portion which is located on a low position due to the concave part, while a gate electrode (20) is arranged on an ordinary region (OR) having an edge portion projecting beyond the depressed region. A gate end cap (margin part) of the gate electrode (20) has a length x, while that of the gate electrode (30) has a length x+α. Thus provided is a semiconductor device causing no current defect between source/drain regions even if the active area and an insulating film defining this active area fail to satisfy the layout design following refinement of the semiconductor device.

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patent: WO 94/29898 (1994-12-01), None

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