Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2006-03-14
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S257000, C257S321000, C438S201000, C438S257000, C365S185010, C365S185030
Reexamination Certificate
active
07012295
ABSTRACT:
The memory cell transistor has a first cell site gate insulator, a first lower conductive layer on the first cell site gate insulator, a first inter-electrode dielectric on the first lower conductive layer, and a first upper conductive layer on the first inter-electrode dielectric. A select transistor has a second cell site gate insulator having a same thickness as the first cell site gate insulator, a second lower conductive layer on the second cell site gate insulator, a second inter-electrode dielectric on the second lower conductive layer, and a second upper conductive layer on the second inter-electrode dielectric. The peripheral transistor has a first peripheral site gate insulator having a thickness thinner than the first cell site gate insulator.
REFERENCES:
patent: 2005/0141291 (2005-06-01), Noguchi et al.
patent: 2001-015617 (2001-01-01), None
patent: 2001-168306 (2001-06-01), None
patent: 2001-210809 (2001-08-01), None
patent: 2003-037251 (2003-02-01), None
Arai Fumitaka
Sakuma Makoto
Sato Atsuhiro
Nelms David
Tran Long
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