Self-aligned source structure of planar DMOS power...

Details Self-aligned source structure of planar DMOS power... Self-aligned source structure of planar DMOS power...

2006-01-31

2006-01-31

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S337000, C257S338000, C257S341000

Reexamination Certificate

active

06992353

ABSTRACT:
A self-aligned source structure is disclosed by the present invention, in which a p-body diffusion region is formed in an n−epitaxial silicon layer on an n+silicon substrate through a patterned window; a p+diffusion region is formed within the p-body diffusion region through a first self-aligned implantation window surrounded by a first sidewall dielectric spacer being formed over and on a silicon nitride layer; an n+source diffusion ring is formed in a surface portion of the p-body diffusion region and on an extended portion of the p+diffusion region through a second self-aligned implantation window formed between the silicon nitride layer and a masking layer surrounded by the first sidewall dielectric spacer; and a self-aligned source contact window is formed on the n+source diffusion ring surrounded by a second sidewall dielectric spacer and on the p+diffusion region surrounded by the n+source diffusion ring.

REFERENCES:
patent: 5973361 (1999-10-01), Hshieh et al.

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