Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-01-31
2006-01-31
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S692000
Reexamination Certificate
active
06992006
ABSTRACT:
The present invention provides a method for fabricating a semiconductor device which initially performs chemical mechanical polishing with respect to a metal film made of copper formed on a semiconductor substrate to form wires composed of the metal film on the semiconductor substrate and subsequently removes a wire-to-wire bridge occurring during the formation of the wires and remaining on the semiconductor substrate to cause unneeded conduction between the wires adjacent to each other. The removal of the wire-to-wire bridge is performed by oxidizing the wire-to-wire bridge into a copper oxide by using an aqueous hydrogen peroxide and then dissolving the copper oxide by using an oxalic acid. This allows the removal of the wire-to-wire bridge without damaging the main bodies of the wires.
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Kawano Hiroshi
Matsumoto Muneyuki
Miyata Tsuyoshi
Otsuka Hideki
Anya Igwe U.
Baumeister B. William
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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