Protective metal structure and method to protect low-K...

Details Protective metal structure and method to protect low-K... Protective metal structure and method to protect low-K...

2006-03-07

2006-03-07

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

C257S257000, C257S170000, C257S529000, C257S665000, C438S601000

Reexamination Certificate

active

07009222

ABSTRACT:
A method to protect a low-K IMD layer underlying a fuse link during a fuse blowing process including a guarded fuse and method for forming the same including forming a fuse portion comprising two metal fuse interconnect structures and a guard ring comprising a metal interconnect structure surrounding the fuse portion in an uppermost IMD layer comprising a dielectric constant of less than about 3.2; forming a protective metal portion electrically isolated in the uppermost IMD layer to cover at least a portion of an area extending between the fuse portions; forming at least one overlying dielectric insulating layer over the uppermost layer to include extended portions of the fuse portion and the guard ring; and, forming a metal fuse link portion to electrically interconnect the fuse portion wherein the fuse portion overlies at least a portion of the protective metal portion.

REFERENCES:
patent: 6100116 (2000-08-01), Lee et al.

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