Ion implant monitoring through measurement of modulated...

Details Ion implant monitoring through measurement of modulated... Ion implant monitoring through measurement of modulated...

2006-01-24

2006-01-24

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

For light transmission or absorption

C356S445000

Reexamination Certificate

active

06989899

ABSTRACT:
A method for simultaneously monitoring ion implantation dose, damage and/or dopant depth profiles in ion-implanted semiconductors includes a calibration step where the photo-modulated reflectance of a known damage profile is identified in I-Q space. In a following measurement step, the photo-modulated reflectance of a subject is empirically measured to obtain in-phase and quadrature values. The in-phase and quadrature values are then compared, in I-Q space, to the known damage profile to characterize the damage profile of the subject.

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