Method for forming fuse integrated with dual damascene process

Details Method for forming fuse integrated with dual damascene process Method for forming fuse integrated with dual damascene process

2006-09-05

2006-09-05

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S702000, C438S132000, C438S601000

Reexamination Certificate

active

07101804

ABSTRACT:
A method for forming a fuse includes forming an interconnection pattern and a fuse pattern on a substrate using a damascene process. A passivation layer is formed on a surface of the substrate over the interconnection pattern and the fuse pattern. Then, the passivation layer is patterned to form a pad opening that exposes a portion of the interconnection pattern. A metal pad is formed on the interconnection pattern in the pad opening. A portion of the metal pad extends over the passivation layer. The passivation layer on the fuse pattern is partially etched to form a fuse opening.

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