Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-30
2006-05-30
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S761000
Reexamination Certificate
active
07053455
ABSTRACT:
Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
REFERENCES:
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2002/0149065 (2002-10-01), Koyama et al.
patent: 2004/0147101 (2004-07-01), Pomarede et al.
patent: 2003-77911 (2003-03-01), None
M. R. Visokay, et al., “Application Of HfSiON as a Gate Dielectric Material”, Applied Physics Letters, vol. 80, No. 17, Apr. 29, 2002, pp. 3183-3185.
Ino Tsunehiro
Kamimuta Yuuichi
Koike Masahiro
Koyama Masato
Nishiyama Akira
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