Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-07-11
2006-07-11
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C438S040000
Reexamination Certificate
active
07075103
ABSTRACT:
The invention relates to composite articles comprising a substrate and additional layers on the substrate. According to one example, the layers are selected so that the difference in the coefficient of thermal expansion (CTE) between the substrate and a first layer on one side of the substrate is substantially equal to the CTE difference between the substrate and a second layer on the other side of the substrate. The stress caused by the CTE difference and/or shrinkage on one side of the substrate during heating or cooling is balanced by the stress caused by the CTE difference on the other side of the substrate during heating or cooling. Such stress balancing can reduce or minimize curling of the substrate.
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Duggal Anil Raj
Kim Tae Won
Schaepkens Marc
Yan Min
General Electric Company
Gioeni Mary Louise
Powell, III William E.
Smith Bradley K.
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