Etching method

Details Etching method Etching method

2006-04-18

2006-04-18

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S718000, C438S724000, C438S725000

Reexamination Certificate

active

07030028

ABSTRACT:
A dual damascene structure with a lesser degree of shoulder loss is achieved. In a method for forming a dual damascene structure having a shoulder in an organic low k film layer by dry-etching the organic low k film layer208and a mask layer210formed over the organic low k film208using at least two different mixed gases, a first step in which the mask layer is etched using a first process gas and then the organic low k film layer is etched into a predetermined depth by continuously using the first process gas and a second step following the first step, in which the organic low k film layer is etched using a second process gas are executed. Since a protective wall is formed at a side wall of a via during the first step, the extent of the shoulder loss occurring in the junction region where a trench and a via form a junction can be reduced.

REFERENCES:
patent: 6017817 (2000-01-01), Chung et al.
patent: 6159661 (2000-12-01), Huang et al.
patent: 6284149 (2001-09-01), Li et al.
patent: 6309962 (2001-10-01), Chen et al.
patent: 6313028 (2001-11-01), Huang et al.
patent: 2000-114373 (2000-04-01), None
patent: 2000-269329 (2000-09-01), None

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