Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2006-04-25

2006-04-25

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S660000, C438S687000

Reexamination Certificate

active

07033928

ABSTRACT:
A method of fabricating a semiconductor device, including at least the steps of (a) forming a via-hole or trench throughout an electrically insulating layer, (b) forming a wiring material layer on the electrically insulating layer such that the via-hole or trench is filled with the wiring material layer, (c) annealing the wiring material layer, (d) cooling the wiring material layer down to a temperature equal to or lower than a predetermined temperature, and (e) applying chemical mechanical polishing (CMP) to the wiring material layer such that the wiring material layer exists only in the via-hole or trench. The step (c) is carried out prior to the step (e), and the step (d) is carried out after the step (c).

REFERENCES:
patent: 5665659 (1997-09-01), Lee et al.
patent: 6368967 (2002-04-01), Besser
Korean Offiice Action dated Feb. 5, 2005 with Japanese translation.
Japanese translation of Korean Office Action with English translation of pertinent portions.

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