Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-04
2006-07-04
Parekh, Nitin (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S622000, C438S668000, C438S675000, C257S774000, C257S758000
Reexamination Certificate
active
07071097
ABSTRACT:
Interconnect dual damascene structure are fabricated by depositing on a layer of at least one dielectric, a mask forming layer for providing the via-level mask layer of the dual damascene structures; creating an elongated via pattern in the via-level mask layer; depositing a layer of line-level dielectric and creating a line pattern through the layer of line-level dielectric, and transferring the line pattern through the projected intersection of the elongated via-level pattern and of the line-level pattern thereby generating an aligned dual damascene structure. A conductive liner layer is deposited in the dual damascene structure followed by filling the dual damascene structure with a conductive fill metal to form a set of metal lines. The metal and liner layers are planarized.
REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5897349 (1999-04-01), Agnello
patent: 6331237 (2001-12-01), Andricacos et al.
patent: 6348299 (2002-02-01), Aviram et al.
patent: 6416812 (2002-07-01), Andricacos et al.
patent: 6437440 (2002-08-01), Cabral, Jr. et al.
patent: 6551919 (2003-04-01), Venkatesan et al.
patent: 6800571 (2004-10-01), Cheung et al.
patent: 2001/0023991 (2001-09-01), Kakuhara
patent: 2002/0092673 (2002-07-01), Andricascos et al.
patent: 2003/0045093 (2003-03-01), Givens et al.
patent: 2003/0201537 (2003-10-01), Lane et al.
Connolly Bove & Lodge & Hutz LLP
International Business Machines - Corporation
Morris Daniel P.
Parekh Nitin
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