Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-09
2006-05-09
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S673000, C438S709000
Reexamination Certificate
active
07041597
ABSTRACT:
The present invention relates to a semiconductor device and a method for fabricating a contact of the semiconductor device, and in particular, to the method for fabricating a semiconductor contact of the device for electrically coupling upper and lower metal wires or coupling an electrode and a metal wire and a method for fabricating the contact. The method includes forming an interlayer insulating layer on a semiconductor substrate; forming a contact hole by selectively removing the interlayer insulating layer; forming a barrier metal layer on a surface of the interlayer insulating layer, increasing roughness of a surface of the barrier layer at an area around an inlet of the contact hole; and forming a contact by filling the contact hole with a conductive material. According to this method, the conductive layer is slowly deposited around the inlet of the contact hole relative to the other areas of the contact bole, such that it is possible to form a void free contact with a high aspect ratio.
REFERENCES:
patent: 5747379 (1998-05-01), Huang et al.
patent: 5807660 (1998-09-01), Lin et al.
patent: 6025269 (2000-02-01), Sandhu
patent: 6528412 (2003-03-01), Wang et al.
DongbuAnam Semiconductor Inc.
Fortney Andrew D.
Nelms David
Tran Long
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