Semiconductor device having void free contact and method for...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S673000, C438S709000

Reexamination Certificate

active

07041597

ABSTRACT:
The present invention relates to a semiconductor device and a method for fabricating a contact of the semiconductor device, and in particular, to the method for fabricating a semiconductor contact of the device for electrically coupling upper and lower metal wires or coupling an electrode and a metal wire and a method for fabricating the contact. The method includes forming an interlayer insulating layer on a semiconductor substrate; forming a contact hole by selectively removing the interlayer insulating layer; forming a barrier metal layer on a surface of the interlayer insulating layer, increasing roughness of a surface of the barrier layer at an area around an inlet of the contact hole; and forming a contact by filling the contact hole with a conductive material. According to this method, the conductive layer is slowly deposited around the inlet of the contact hole relative to the other areas of the contact bole, such that it is possible to form a void free contact with a high aspect ratio.

REFERENCES:
patent: 5747379 (1998-05-01), Huang et al.
patent: 5807660 (1998-09-01), Lin et al.
patent: 6025269 (2000-02-01), Sandhu
patent: 6528412 (2003-03-01), Wang et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device having void free contact and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having void free contact and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having void free contact and method for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3591201

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.