Semiconductor device having low-k dielectric film in pad region

Details Semiconductor device having low-k dielectric film in pad region Semiconductor device having low-k dielectric film in pad region

2006-03-21

2006-03-21

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

C257S750000, C257S758000, C257S784000

Reexamination Certificate

active

07015589

ABSTRACT:
A low-k dielectric film is formed on an entire surface of a substrate having a pad region and a circuit region. A resist pattern is formed on the low-k dielectric film, and an opening is formed in the low-k dielectric film of the pad region using the resist pattern as a mask. A silicon oxide film having strength higher than the low-k dielectric film is formed in the opening by liquid-phase deposition. Wirings are formed in the silicon oxide film of the pad region and in the low-k dielectric film of the circuit region using the damascene method.

REFERENCES:
patent: 6037668 (2000-03-01), Cave et al.
patent: 6124198 (2000-09-01), Moslehi
patent: 6362531 (2002-03-01), Stamper et al.
patent: 6372661 (2002-04-01), Lin et al.
patent: 6518166 (2003-02-01), Chenet al.
patent: 2003/0020163 (2003-01-01), Hung et al.
patent: 2003/0074789 (2003-04-01), Chen et al.
patent: 2003/0155642 (2003-08-01), Davis et al.

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