Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-18
2006-04-18
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S903000, C438S197000
Reexamination Certificate
active
07030449
ABSTRACT:
In a complete CMOS SRAM having a memory cell composed of six MISFETs formed over a substrate, a capacitor element having a stack structure is formed of a lower electrode covering the memory cell, an upper electrode, and a capacitor insulating film (dielectric film) interposed between the lower electrode and the upper electrode. One electrode (the lower electrode) of the capacitor element is connected to one storage node of a flip-flop circuit, and the other electrode (the upper electrode) is connected to the other storage node. As a result, the storage node capacitance of the memory cell of the SRAM is increased to improve the soft error resistance.
REFERENCES:
patent: 3956615 (1976-05-01), Anderson et al.
patent: 4652990 (1987-03-01), Pailen et al.
patent: 4984200 (1991-01-01), Saitoo et al.
patent: 5072286 (1991-12-01), Minami et al.
patent: 5126285 (1992-06-01), Kosa et al.
patent: 5162259 (1992-11-01), Kolar et al.
patent: 5194749 (1993-03-01), Meguro et al.
patent: 5237187 (1993-08-01), Suwanai et al.
patent: 5239196 (1993-08-01), Ikeda et al.
patent: 5324961 (1994-06-01), Rodder
patent: 5426324 (1995-06-01), Rajeevakumar
patent: 5483083 (1996-01-01), Meguro et al.
patent: 5530807 (1996-06-01), Baker et al.
patent: 5631863 (1997-05-01), Fechner et al.
patent: 5635731 (1997-06-01), Ashida
patent: 5652457 (1997-07-01), Ikeda et al.
patent: 5684315 (1997-11-01), Uchiyama et al.
patent: 5834851 (1998-11-01), Ikeda et al.
patent: 5858845 (1999-01-01), Cheffings
patent: 2001/0023965 (2001-09-01), Ikeda et al.
patent: 0342466 (1989-11-01), None
patent: 2-103795 (1990-04-01), None
patent: 3-114256 (1991-05-01), None
patent: 3-183162 (1991-08-01), None
patent: 3234058 (1991-10-01), None
patent: 4180262 (1992-06-01), None
patent: 05-275645 (1993-10-01), None
patent: 6151771 (1994-05-01), None
patent: 1994-0003595 (1993-03-01), None
patent: 1996-004086 (1996-03-01), None
patent: WO 02/061840 (2002-08-01), None
Korean Office Action, dated Apr. 27, 2005, for Application No. 10-2004-0048902.
Patent Abstracts of Japan, for JP 03-234058, publication date Oct. 18, 1991.
Verhaar, et al., A 25 μm2Bulk Full CMOS SRAM Cell Technology With Fully Overlapping Contacts >>, Philips Research Laboratories, 1990 IEEE, 18.2.1-18.2.4.
Office Action dated Jun. 25, 2002, in corresponding Japanese Patent Application.
Hashimoto Naotaka
Hoshino Yutaka
Ikeda Shuji
Antonelli, Terry Stout and Kraus, LLP.
Dang Phuc T.
Renesas Technology Corp.
LandOfFree
Semiconductor integrated circuit device having capacitor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device having capacitor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device having capacitor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3585452