Method of fabricating silicon integrated circuit on glass

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S479000, C438S496000, C438S795000, C438S796000, C257SE21333, C257SE21475, C257SE21415

Reexamination Certificate

active

07071042

ABSTRACT:
A method of fabricating a silicon integrated circuit on a glass substrate includes preparing a glass substrate; fabricating a silicon layer on the glass substrate; implanting ions into the active areas of the silicon layer; covering the silicon layer with a heat pad material; activating the ions in the silicon layer by annealing while maintaining the glass substrate at a temperature below that of the thermal stability of the glass substrate; removing the heat pad material; and completing the silicon integrated circuit.

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