Method for fabricating a contact hole plane in a memory module

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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Details

C430S311000, C430S313000, C430S316000, C430S317000

Reexamination Certificate

active

07018781

ABSTRACT:
Disclosed is a method for fabricating a contract hole plane in a memory module with an arrangement of memory cells each having a selection transistor. The methods can be utilized during the production of dynamic random access memory (DRAM) modules.

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patent: 6096633 (2000-08-01), Hsu
patent: 6171954 (2001-01-01), Hsu
patent: 6287905 (2001-09-01), Kim et al.
patent: 6624068 (2003-09-01), Thakar et al.
patent: 2003/0008453 (2003-01-01), Kang et al.
patent: 199 35 852 (2001-02-01), None
patent: 102 23 748 (2002-12-01), None
patent: 01-09948 (2001-02-01), None

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