Low capacitance FET for operation at subthreshold voltages

Details Low capacitance FET for operation at subthreshold voltages Low capacitance FET for operation at subthreshold voltages

2006-03-07

2006-03-07

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S335000, C257S336000, C257S342000, C257S344000, C257S345000

Reexamination Certificate

active

07009265

ABSTRACT:
A field effect transistor (FET) has underlap regions adjacent to the channel doping region. The underlap regions have very low dopant concentrations of less than 1×1017/cc or 5×1016/cc and so tend to have a high resistance. The underlap regions reduce overlap capacitance and thereby increase switching speed. High resistance of the underlap regions is not problematic at subthreshold voltages because the channel doping region also has a high resistance at subthreshold voltages. Consequently, the present FET has low capacitance and high speed and is particularly well suited for operation in the subthreshold regime.

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R.C. Dockerty; “Formation of Low Capacitance Diffusions”; IBM Technical Disclosur Bulletin; Aug. 1981; pp. 1743-1744.

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