Compound semiconductor device, production method thereof,...

Details Compound semiconductor device, production method thereof,... Compound semiconductor device, production method thereof,...

2006-04-18

2006-04-18

Wilson, Allan R. (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S285000, C438S602000

Reexamination Certificate

active

07030003

ABSTRACT:
A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate is disclosed. The surface of the silicon single crystal substrate is a {111} crystal plane inclined at an angle of 5.0° to 9.0° toward a <110> crystal azimuth.

REFERENCES:
patent: 3788890 (1974-01-01), Mader et al.
patent: 3877060 (1975-04-01), Shono et al.
patent: 4293370 (1981-10-01), Nagano et al.
patent: 4833103 (1989-05-01), Agostinelli et al.
patent: 4865659 (1989-09-01), Shigeta et al.
patent: 4872046 (1989-10-01), Morkoc et al.
patent: 4963508 (1990-10-01), Umeno et al.
patent: 5714006 (1998-02-01), Kizuki et al.
patent: 6045614 (2000-04-01), de Lyon et al.
patent: 6541799 (2003-04-01), Udagawa
patent: 6835962 (2004-12-01), Udagawa
patent: 2003/0001162 (2003-01-01), Udagawa
patent: 2003/0234400 (2003-12-01), Udagawa
patent: 2004/0183089 (2004-09-01), Udagawa
patent: 62-171114 (1987-07-01), None
patent: 8-139027 (1996-05-01), None
patent: 2002-185041 (2002-06-01), None
Yoshio Honda et al., “Growth of (1τ101) GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE”, Journal of Crystal Growth, (2002) vol. 242, pp. 82-86, no month cited.

Affiliated with

Also associated with

Rating

Compound semiconductor device, production method thereof,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor device, production method thereof,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor device, production method thereof,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3582120