Method making bonding pad

Details Method making bonding pad Method making bonding pad

2006-01-17

2006-01-17

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S614000, C438S627000, C438S643000, C438S692000

Reexamination Certificate

active

06987057

ABSTRACT:
An bonding pad structure has a passivation layer over a copper layer having a pad window to expose a portion of the copper layer, a barrier layer conformal to a profile of the pad window, and an aluminum pad located in the pad window. The metal layer can be an aluminum, aluminum alloy or aluminum dominated layer for providing a better adhesion property between the copper layer and the bonding wire.

REFERENCES:
patent: 5559056 (1996-09-01), Weiler
patent: 5631499 (1997-05-01), Hosomi et al.
patent: 5965943 (1999-10-01), Mizuta
patent: 6222279 (2001-04-01), Mis et al.
patent: 6362528 (2002-03-01), Anand
patent: 6376353 (2002-04-01), Zhou et al.

Affiliated with

Also associated with

Rating

Method making bonding pad does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method making bonding pad, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method making bonding pad will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3581358