Pattern formation method using light-induced suppression of...

Etching a substrate: processes – Nongaseous phase etching of substrate – Irradiating – ion implanting – alloying – diffusing – or...

Reexamination Certificate

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C216S065000, C216S085000, C438S745000

Reexamination Certificate

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07070702

ABSTRACT:
A method of selectively etching a substrate (1) comprises applying etchant (4) at a surface of the substrate and illuminating an area of the surface with light from a light source (7), whereby etching is at least partially inhibited in the illuminated area (18) of the substrate. Preferably LiNbO3 is patterned in HF KOH, or HF═HNO3 solutions by selective illumination using UV laser light with 300 to 1000 mn wavelength, thereby allowing for interferometric or holographic structures to be formed.

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Khudobenko A I et al.: “Fabrication of submicron relief gratings in p-GaAs in the process of maskless holographic wet etching by laser-induced etch rate reduction method” Laser-Induced Thin Film Processing, San Jose, CA, USA, vol. 2403, Feb. 1995, pp. 409-413, Proceedings of the SPIE-The International Society for Optical Engineering, USA.
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