Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2006-07-11
2006-07-11
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S207000, C365S210130, C365S185200
Reexamination Certificate
active
07075842
ABSTRACT:
Disclosed is a memory architecture where current sense amplifiers are used instead of voltage sense amplifiers, and where the memory cells normally disposed along a single bit line are divided between two half bit lines. Each half bit line is coupled to a respective input of the current sense amplifier. When one of the memory cells is selected for reading, it couples a current related to its stored data state to the half bit line that it is coupled to. During this operation, a reference current is generated on the other half bit line. Also disclosed are novel current sense amplifiers.
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Tzartzanis Nestor
Walker William W.
Fujitsu Limited
Hoang Huan
Sheppard Mullin Richter & Hampton LLP
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