Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-03-14
2006-03-14
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S160000, C438S164000, C438S640000, C438S662000
Reexamination Certificate
active
07011994
ABSTRACT:
A method for forming via holes includes placing an insulating layer on a first wiring layer, forming opening portions in the insulating layer, and forming a second wiring layer on the insulating layer. At the time of forming the opening portions, the insulating layer is irradiated with a laser beam with the focus position staggered.
REFERENCES:
patent: 6631558 (2003-10-01), Burgess
patent: 2003/0007332 (2003-01-01), Seki et al.
Iwafuchi Toshiaki
Yanagisawa Yoshiyuki
Bell Boyd & Lloyd LLC
Lee Hsien-Ming
Sony Corporation
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