Single polisilicon emitter bipolar junction transistor...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S314000

Reexamination Certificate

active

07018778

ABSTRACT:
A process for forming a bipolar transistor where the doping implantation of the extrinsic base regions does not affect the emitter doping levels. The techniques is to not remove the photoresist layer used to define the poly emitter contact. The photoresist layer for defining the extrinsic base regions overlays the photoresist layer over the emitter poly. When the base photoresist is processed to expose the base regions the photoresist over the emitter poly remains in tact. In this arrangement the base implantation is prevented from driving through the emitter poly and affecting the doping levels in the emitter.

REFERENCES:
patent: 4997777 (1991-03-01), Boivin
patent: 5089865 (1992-02-01), Mitsui et al.
patent: 5183771 (1993-02-01), Mitsui et al.
patent: 5208472 (1993-05-01), Su et al.
patent: 5290717 (1994-03-01), Shimazu
patent: 5977600 (1999-11-01), Wristers et al.

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