Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-07-11
2006-07-11
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S510000
Reexamination Certificate
active
07074697
ABSTRACT:
The present invention relates to the production of thin film epilayers of III–V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III–V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.
REFERENCES:
Chaldyshev et al., “Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures”, Jul. 1998, Semiconductors, vol. 32, No. 7, pp. 692-695.
Bert et al., “Enhanced arsenic excess in low-temperature grown GaAs due to indium doping”, Jun. 1997, Appl. Phys. Lett. 70 (23), pp. 3146-3148.
F.W. Smith et al, “New MBE Buffer Used to Eliminate Backgating in GaAs MESFET's”, IEEE Electron Device Letters, vol. 9, No. 2, 1988, pp. 77-80.
G.M. Metze et al, “Effects of Very Low Growth Rates on GaAs Grown by Molecular Beam Epitaxy at Low Substrate Temperatures”, Applied Physics Letters, vol. 42, No. 9, May 1, 1983, pp. 818-820.
S. Gupta et al, “Ultrafast Carrier Dynamics in III-V Semiconductors Grown by Molecular Beam Epitaxy at Very Low Substrate Temperatures”, IEEE Journal of Quantum Electronics, vol. 28, No. 10, Oct. 1992, pp. 2464 2472.
S. Gupta et al, “Subpicosecond Carrier Lifetime in GaAs Grown by Molecular Beam Epitaxy at Low Temperatures”, Applied Physics Letters, vol. 59, No. 25, Dec. 16, 1991, pp. 3276-3278.
T.R. Weatherford et al, “Effects of Low Temperature Buffer Layer Thickness and Growth Temperature on the SEE Sensitivity of GaAs HIGFET Circuits”, IEEE Transactions on Nuclear Science, vol. 44, No. 6, Dec. 1997, pp. 2298-2305.
D.C. Look, “On Compensation and Conductivity Models for Molecular Beam Epitaxial GaAs Grown at Low Temperature”, Journal of Applied Physics, vol. 70, No. 6, Sep. 15, 1991, pp. 3148-5151.
M. Kaminska et al, “High Resistivity of Low Temperature MBE GaAs”, Semi Insulating III-V Materials, Proceedings of the 6th Conference on Semi insulating III V Materials, May 13-16, 1990, Toronto, Canada, pp. 111 116.
X. Liu et al, “Native Point Defects in Low Temperature Grown GaAs”, Applied Physics Letters, vol. 67, No. 2, Jul. 10, 1995, pp. 279-281.
M. Luysberg et al, “Effects of the Growth Temperature and As/Ga Flux Ratio on the Incorporation of Excess As into Low Temperature Grown GaAs”, Journal of Applied Physics, vol. 83, No. 1, Jan. 1, 1998, pp. 561-566.
Zuzanna Liliental-Weber, “TEM Study of the Structure of MBE GaAs Layers Grown at Low Temperature”, Materials Research Society Symposium Proceedings, San Francisco, California, Apr. 16-19, 1990; vol. 198, pp. 371-376.
M.R. Melloch et al, “Formation of Arsenic Precipitates in GaAs Buffer Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperatures”, Applied Physics Letters, vol. 57, No. 15, Oct. 8, 1990, pp. 1531 1533.
X. Liu et al, “Mechanism Responsible for the Semi Insulating Properties of Low Temperature Grown GaAs”, Applied Physics Letters, vol. 65, No. 23, Dec. 5, 1994, pp. 3002-3004.
B.J. Lin et al, “Anomalies in MODFET's with a Low Temperature Buffer”, IEEE Transactions on Electron Devices, vol. 37, No. 1, Jan. 1990, pp. 46-50.
Z. Liliental Weber et al, “Structural Properties of the GaAs Layers Grown by MBE at Low Temperatures”, Semi Insulating III-V Materials, Proceedings of the 8th Conference on Semi insulating III-V Materials, Jun. 6-10, 1994, Warsaw, Poland, pp. 305-317.
P. Specht et al, “Defect Control in As-Rich GaAs”, Materials Science Forum, Proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, Jul. 1997, vols. 258-262, pp. 951-956.
M.K. Weilmeier et al, “A New Optical Temperature Measurement Technique for Semiconductor Substrates in Molecular Beam Epitaxy”, Canadian Journal of Physics, vol. 69, 1991, pp. 422-426.
U. Siegner et al, “Ultrafast High-Intensity Nonlinear Absorption Dynamics in Low Temperature Grown Gallium Arsenide”, Applied Physics Letters, vol. 69, No. 17, Oct. 21, 1996, pp. 2566-2568.
P. Grenier et al, “Subband Gap Carrier Dynamics in Low Temperature Grown GaAs”, Applied Physics Letters, vol. 70, No. 15, Apr. 14, 1997, pp. 1998 2000.
T.S. Sonsnowski et al, “High-Carrier-Density Electron Dynamics in Low Temperature Grown GaAs” Applied Physics Letters, vol. 70, No. 24, Jun. 16, 1997, pp. 3245-3247.
M.R. Melloch et al, “Formation of Two Dimensional Arsenic Precipitate Arrays in GaAs”, Applied Physics Letters, vol. 61, No. 2, Jul. 13, 1992, pp. 177-179.
M. Kaminska et al, “Hopping Conduction of Low Temperature GaAs Within an Arsenic Antisite Defect Band”, 20th International Conference on The Physics of Semiconductors, Aug. 6-10, 1990, Thessaloniki, Greece, vol. 1, pp. 473-476.
D.C. Look et al, “Anomalous Hall-Effect Results in Low Temperature Molecular Beam Epitaxial GaAs: Hopping in a Dense EL2 Like Band”, Physical Review B, vol. 42, No. 6, Aug. 15, 1990, pp. 3578-3581.
J. Gebauer et al, “Defect Identification in GaAs Grown at Low Temperatures by Positron Annihilation”, Journal of Applied Physics, vol. 87, No. 12, Jun. 15, 2000, pp. 8368-8379.
E.R. Weber et al, “Identification of AsGa Antisites in Plastically Deformed GaAs”, Journal of Applied Physics, vol. 53, No. 9, Sep. 1982, pp. 6140-6143.
D.E. Bliss et al, “Annealing Characteristics of Low Temperature Grown GaAs:Be”, Materials Research Society Symposium Proceedings, Dec. 4-6, 1991, Boston, Massachusetts, vol. 241, pp. 93-98.
J. Gebauer et al, “Identification and Quantification of Defects in Highly Si Doped GaAs by Positron Annihilation and Scanning Tunneling Microscopy” Physical Review Letters, vol. 78, No. 17, Apr. 28, 1997, pp. 3334-3337.
B.I. Shklovskii et al, “A General Description of Hopping Conduction in Lightly Doped Semiconductors”, Chapter 4, Section 1, Electronic Properties of Doped Semiconductors, (© 1984, Springer Verlag), pp. 74-82.
R.C. Lutz et al, “Thermal Stabilization of Non Stoichiometric GaAs through Beryllium Doping”, Materials Research Society Symposium Proceedings, Apr. 13-17, 1998, San Francisco, California, vol. 510, pp. 55-59.
S.M. Sze, Appendix H, Physics of Semiconductor Devices, 2nd ed., (© 1981, John Wiley & Sons, Inc.), pp. 850 851.
J. Kruger et al, “The Influence of Native Point Defects on the Performance of Diodes Built on Neutron Irradiated Semi Insulating GaAs”, Semiconducting and Insulating Materials, Proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC'9), Apr. 29-May 3, 1996, Toulouse, France, pp. 345 348.
M.A. Zaidi et al, “Minority Carrier Capture Cross Section of the EL2 Defect in GaAs”, Applied Physics Letters, vol. 61, No. 20, Nov. 16, 1992, pp. 2452-2454.
M. Oestreich et al, “Picosecond Spectroscopy of Plasctically Deformed GaAs”, Journal of Luminescence, vol. 58, (© 1994, Elsevier Science B.V.), pp. 123-126.
A. Mitonneau et al, “Electron and Hole Capture Cross Sections at Deep Centers in Gallium Arsenide”
Specht Petra
Weatherford Todd Russell
Weber Eicke R.
Michaelson Peter L.
Michaelson & Associates
Pert Evan
The Regents of the University of California
The United States of America as represented by the Secretary of
LandOfFree
Doping-assisted defect control in compound semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Doping-assisted defect control in compound semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doping-assisted defect control in compound semiconductors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3575652