Semiconductor device including nonvolatile memory

Details Semiconductor device including nonvolatile memory Semiconductor device including nonvolatile memory

2006-04-04

2006-04-04

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S326000

Reexamination Certificate

active

07023049

ABSTRACT:
A semiconductor device including a nonvolatile memory formed on a semiconductor substrate. According to the semiconductor device, a second gate electrode film is used for a gate electrode film of a logic circuit, and for a control gate electrode film of a nonvolatile memory. As the second gate electrode film is formed at a relatively later step in fabrication, subsequent thermal process may be avoided. The gate structure is suitable for miniaturization of the transistor in the logic circuit.

REFERENCES:
patent: 4373249 (1983-02-01), Kosa et al.
patent: 4471373 (1984-09-01), Shimizu et al.
patent: 5194924 (1993-03-01), Komori et al.
patent: 6265739 (2001-07-01), Yaegashi et al.
patent: 6420754 (2002-07-01), Takahashi et al.
patent: 6730973 (2004-05-01), Hibi et al.
patent: 2001/0049166 (2001-12-01), Peschiaroli et al.
patent: 2002/0008278 (2002-01-01), Mori
patent: 2002-64157 (2002-02-01), None

Affiliated with

Also associated with

Rating

Semiconductor device including nonvolatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including nonvolatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including nonvolatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3574387