Switchable capacitance and nonvolatile memory device using...

Static information storage and retrieval – Systems using particular element – Capacitors

Reexamination Certificate

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C365S168000, C365S145000, C257S298000, C257S310000, C257S312000

Reexamination Certificate

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06990008

ABSTRACT:
A device (2) with a switchable capacitance comprises a first and a second electrode (12, 20) facing each other, a dielectric layer (14) between a first and a second capacitor electrode (12, 20), and a switching member (18) between the second electrode (20) and the dielectric layer (14), the switching member (18) comprising a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the lower conductivity state and the higher conductivity state being persistent, wherein the capacitance of the device (2) depends on the conductivity state of the switching material.

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patent: 6195047 (2001-02-01), Richards
patent: 6204139 (2001-03-01), Liu et al.
patent: 6531371 (2003-03-01), Hsu et al.
patent: 2003/0156445 (2003-08-01), Zhuang et al.
patent: 2005/0111256 (2005-05-01), Bednorz et al.
patent: WO 00/49659 (2000-08-01), None
A. Beck et al., “Reproducible Switching Effect in Thin Oxide Films for Memory Applications,” Applied Physics Letters, vol. 77, No. 1, pp. 139-141, Jul. 2000.
Y. Watanabe et al., “Current-Driven Insulator-Conductor Transition and Nonvolatile Memory in Chromium-Doped SrTiO3Single Crystals,” Applied Physics Letters, vol. 78, No. 23, pp. 3738-3740, Jun. 2001.
C. Rossel et al., “Electrical Current Distribution Across a Metal-Insulator-Metal Structure During Bistable Switching,” Journal of Applied Physics, vol. 90, No. 6, pp. 2892-2898, Sep. 2001.
K. Ueno et al., “Field-Effect Transistor on SrTiO3with Sputtered Al2O3Gate Insulator,” Applied Physics Letters, vol. 83, No. 9, pp. 1755-1757, Sep. 2003.

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