Method to reduce PEB sensitivity of resist

Details Method to reduce PEB sensitivity of resist Method to reduce PEB sensitivity of resist

2006-07-04

2006-07-04

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S780000, C430S311000, C430S330000

Reexamination Certificate

active

07071124

ABSTRACT:
A method of forming a semiconductor structure, comprises exposing a photoresist layer; followed by heating the photoresist layer to a first temperature for 30 seconds to 3 minutes; followed by heating the photoresist layer to a second temperature for 30 seconds to 3 minutes. The second temperature is 5–15° C. greater than the first temperature.

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