Thin film transistor substrate and manufacturing method thereof

Details Thin film transistor substrate and manufacturing method thereof Thin film transistor substrate and manufacturing method thereof

2006-03-21

2006-03-21

Quach, T. N. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C438S166000, C438S487000, C438S795000

Reexamination Certificate

active

07015081

ABSTRACT:
A thin film transistor substrate manufacturing method, including the steps of forming on a first region of a transparent insulating substrate a first semiconductor film with a first film thickness that is crystallized through excimer laser irradiation; forming on a second region of the transparent insulating substrate a second semiconductor film that is laterally crystallized through continuous wave laser irradiation, the second semiconductor film being arranged to have a film thickness that is greater than or equal to the first film thickness; forming a first thin film transistor on the first semiconductor film; and forming on the second semiconductor film a second thin film transistor that operates at a speed greater than a speed of the first thin film transistor.

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