Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-04-18
2006-04-18
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C216S095000, C216S096000, C216S105000, C216S106000, C148SDIG010, C029S846000, C029S847000
Reexamination Certificate
active
07030033
ABSTRACT:
Priorly, semiconductor devices wherein a flexible sheet with a conductive pattern was employed as a supporting substrate, a semiconductor element was mounted thereon, and the ensemble was molded have been developed. In this case, problems occur that a multilayer wiring structure cannot be formed and warping of the insulating resin sheet in the manufacturing process is prominent. In order to solve these problems, a laminated plate10in which a thin first conductive film11and a thick second conductive film12have been laminated via a third conductive film13is used. After forming a conductive pattern layer11A of a fine pattern by etching the thin first conductive film11,anchor portions15are formed by overetching the third conductive film13by use of the conductive pattern layer11A as a mask, and an insulating adhesive layer16and a sealing resin layer22are made to bite into the anchor portions15so as to strengthen bonding of the insulating adhesive layer16and sealing resin layer22with the conductive pattern11A.
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Igarashi Yusuke
Mizuhara Hideki
Sakamoto Noriaki
Chen Eric B.
Kanto Sanyo Semiconductors Co., Ltd.
Norton Nadine G.
Sanyo Electric Co,. Ltd.
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