Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-07-04
2006-07-04
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
Reexamination Certificate
active
07071123
ABSTRACT:
Provided is a method for fabricating an organic semiconductor transistor having an organic polymeric gate insulating layer. The method includes forming an organic gate insulating layer on a substrate by a vapor deposition method using organic monomer sources, and causing a polymerization reaction to occur in the organic gate insulating layer to complete an organic polymeric gate insulating layer. Since the vapor deposition method, which is a low-temperature dry-type technique, is employed, the organic polymeric gate insulating layer can be uniformly formed on a large-area substrate by a simplified in-situ process.
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Kim Bong Ok
Kim Sung Min
Kim Young Kwan
Kwak Mi Young
Park No Gil
Cantor & Colburn LLP
Geyer Scott B.
Gracel Display Inc.
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