Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

2006-07-18

2006-07-18

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S072000

Reexamination Certificate

active

07078751

ABSTRACT:
The sources or drains14of transistors and photodiodes13, which constitute shaded pixels covered with a shading layer16, are formed on a surface of a highly doped well20provided on a lowly doped substrate11. Therefore, a potential barrier ΔV is formed extended from the lowly doped substrate11toward the highly doped well20. Even if intense spot light is made incident on some of light-receiving pixels and part of light17reaches a neutral region of the lowly doped substrate11, part of diffused charges18photoelectrically converted there cannot intrude into the highly doped well20. Therefore, an output signal level of the shaded pixels does not change, and a black reference level can be maintained.

REFERENCES:
patent: 5386135 (1995-01-01), Nakazato et al.
patent: 6169318 (2001-01-01), McGrath
patent: 6448104 (2002-09-01), Watanabe
patent: 58-097972 (1983-06-01), None
patent: 11-307753 (1999-11-01), None

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