Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2006-05-02

2006-05-02

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S149000, C438S164000, C438S479000, C438S482000, C438S486000

Reexamination Certificate

active

07037811

ABSTRACT:
Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amorphous silicon film103. Then, laser light is irradiated to diffuse nickel element which is concentrated locally. After that, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film106is formed in this step. At this time, gettering of the nickel element into the thermal oxide film106takes place. Then, the thermal oxide film106is removed. Thereby, a crystalline silicon film107having low concentration of the metal element and a high crystallinity can be obtained.

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